Gallium Nitride Processing For Electronics, Sensors And Spintronics (Hb)

Pearton, Stephen J.; Abernathy, Cammy R.; Ren, Fan

ISBN 10: 1852339357 / ISBN 13: 9781852339357

Published by Springer, 2006

About this Item

This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Seller Inventory # ABBB-71161

Bibliographic Details

• Title: Gallium Nitride Processing For Electronics, Sensors And Spintronics (Hb)
• Publisher: Springer
• Publication Date: 2006
• Language: English
• ISBN 10: 1852339357
• ISBN 13: 9781852339357
• Binding: Hardcover
• Condition: New

About this title

Synopsis

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

About the Author

Stephen J Pearton and Cammy R. Abernathy are full professors in the Department of Materials Science and Engineering at the University of Florida, Gainesville. They are both leaders of research groups working in the processing and characterisation of semiconductor materials for high-speed device applications.

Fan Ren is a full professor in the university’s Department of Chemical Engineering, specialising in research into devices based on GaN wide-bandgap semiconductor materials.