Gas Sensing and Field Emission Properties of SnO2 & ZnO Nanomaterials : Synthesis and Characterization of SnO2 and ZnO Nanostructured Materials for Gas Sensing and Field Emission Applications

Niranjan Ramgir

ISBN 10: 3848400685 / ISBN 13: 9783848400683

Published by LAP Lambert Academic Publishing, 2012

About this Item

nach der Bestellung gedruckt Neuware - Printed after ordering - Technological and scientific potentials of high aspect ratio structures of semiconducting oxides are immense and the future of these materials is certainly bright. A thorough understanding of the growth mechanism is a key towards achieving a controlled growth which is of particular significance both for the creation of novel materials as well as for the ultimate device fabrication. In the present work, SnO2 and ZnO based sub-micron structures have been investigated in detail to realize the possible application in gas sensing and field emission devices. The results of the present studies clearly illustrate that the SnO2 matrix can be effectively tailored by doping with elements like Ru, Cu and Th for the selective detection of LPG, H2S and trimethylamine gases, respectively. Interestingly, an ultra-low onset voltage of meager 40 V is obtained for isolated single multipod and one of its arm. The sharp tips of ZnO structures resulted in the onset current density of 2.76 x 107 microA/cm2, which is much greater than the minimum emission current density (1mA/cm2) required to produce the luminance of 300 cd/m2 from VGA-FED.

Seller Inventory # 9783848400683

Bibliographic Details

• Title: Gas Sensing and Field Emission Properties of SnO2 & ZnO Nanomaterials : Synthesis and Characterization of SnO2 and ZnO Nanostructured Materials for Gas Sensing and Field Emission Applications
• Publisher: LAP Lambert Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3848400685
• ISBN 13: 9783848400683
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 22W x 15H x 1.4D centimeters 22 centimeters width by 15 centimeters height by 1.4 centimeters depth
• Weight: 386 grams

About this title

Synopsis

Technological and scientific potentials of high aspect ratio structures of semiconducting oxides are immense and the future of these materials is certainly bright. A thorough understanding of the growth mechanism is a key towards achieving a controlled growth which is of particular significance both for the creation of novel materials as well as for the ultimate device fabrication. In the present work, SnO2 and ZnO based sub-micron structures have been investigated in detail to realize the possible application in gas sensing and field emission devices. The results of the present studies clearly illustrate that the SnO2 matrix can be effectively tailored by doping with elements like Ru, Cu and Th for the selective detection of LPG, H2S and trimethylamine gases, respectively. Interestingly, an ultra-low onset voltage of meager 40 V is obtained for isolated single multipod and one of its arm. The sharp tips of ZnO structures resulted in the onset current density of 2.76 x 107 microA/cm2, which is much greater than the minimum emission current density (1mA/cm2) required to produce the luminance of 300 cd/m2 from VGA-FED.

About the Author

Dr. Niranjan S. Ramgir, Ph. D (Physics), at National Chemical Laboratory, Pune, India. Post Doctoral Fellowship at Department of Electrical Engineering, University of South Florida, Tampa, USA. Humboldt Fellowship at University of Freiburg, Germany. Visiting Scientist at Technical Physics Division, Bhabha Atomic Research Center, Mumbai, India.