Germanium-Silicon Strained Layers and Heterostructures, Volume 24: Supplement 24 (Advances in Electronics and Electron Physics, Supplement 24)

Suresh C. Jain

ISBN 10: 0120145987 / ISBN 13: 9780120145980

Published by Academic Press, 1994

About this Item

hardcover. exlibrary with usual indicators. very good condition.

Seller Inventory # ABE-1756345038640

Bibliographic Details

• Title: Germanium-Silicon Strained Layers and Heterostructures, Volume 24: Supplement 24 (Advances in Electronics and Electron Physics, Supplement 24)
• Publisher: Academic Press
• Publication Date: 1994
• Language: English
• ISBN 10: 0120145987
• ISBN 13: 9780120145980
• Binding: Hardcover
• Condition: Very Good
• Seller catalogs:
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Synopsis

Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSistrained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs and long wavelength (1 to 20 um) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible tomanufacture monolithic Si integrated circuits containing heterojunction devices. Jains monograph, the first of its kind, covers the fundamental physics of strained layers, theory, design, and characteristics of the GeSi heterostructure devices.