Series: Van Nostrand Reinhold Electrical/Computer Science and Engineering Series. Num Pages: 960 pages, 202 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 48. Weight in Grams: 1442. . 2012. Softcover reprint of the original 1st ed. 1988. Paperback. . . . .

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Bibliographic Details

Title: Handbook of Advanced Semiconductor Technology and Computer Systems
Publisher: Springer
Publication Date: 2012
Language: English
ISBN 10: 9401170584
ISBN 13: 9789401170581
Binding: Soft cover
Condition: New

About this title

Synopsis

Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro� duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap� plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma� turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi� dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented.

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