Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applications
Ferroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short.
With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges―such as the wake-up effect, fatigue, and imprint issues―and the strategies developed to mitigate them.
An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials:
- Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages
- Details deposition techniques and approaches to regulating ferroelectric behavior
- Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability
- Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices
- Discusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories
- Provides insight into the reliability of HfO2-based thin films, capacitors, and field-effect transistors
HfO2-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.
Xubing Lu is Professor of Physics at South China Normal University, where his research focuses on dielectric and ferroelectric thin-film materials and their applications in non-volatile memory devices. He earned his PhD in Physics from Nanjing University, China in 2002 and subsequently held research positions as a postdoctoral researcher, JSPS research fellow, and Humboldt fellow across leading institutions in China and abroad. Professor Lu has published over 250 scientific papers and holds more than 20 Chinese patents.
