High-Resolution X-Ray Scattering : From Thin Films to Lateral Nanostructures

Ullrich Pietsch

ISBN 10: 1441923071 / ISBN 13: 9781441923073

Published by Springer New York, Springer US, 2011

About this Item

Druck auf Anfrage Neuware - Printed after ordering - During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

Seller Inventory # 9781441923073

Bibliographic Details

• Title: High-Resolution X-Ray Scattering : From Thin Films to Lateral Nanostructures
• Publisher: Springer New York, Springer US
• Publication Date: 2011
• Language: English
• ISBN 10: 1441923071
• ISBN 13: 9781441923073
• Binding: Taschenbuch
• Edition: 2nd Edition
• Condition: Neu
• Dimensions: 235W x 155H x 24D millimeters 235 millimeters width by 155 millimeters height by 24 millimeters depth
• Weight: 645 grams

About this title

Synopsis

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap­ pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.