Highly Integrated Gate Drivers for Si and GaN Power Transistors

Language: English

Published by Springer, Birkhäuser Apr 2022, 2022

3030689425 / 9783030689421

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This item is printed on demand - Print on Demand Titel. Neuware -This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.¿Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 144 pp. Englisch.

Seller Inventory # 9783030689421

Title
Highly Integrated Gate Drivers for Si and GaN Power Transistors
Author
Achim Seidel
Publisher
Springer, Birkhäuser Apr 2022
Publication year
2022
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3030689425
ISBN 13
9783030689421
Item weight
230 grams
Dimensions
235x155x9 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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