INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications

Jagadeesh Chandra, S. V., Uthanna, S, Mohan Rao, G

ISBN 10: 3843394229 / ISBN 13: 9783843394222

Published by LAP LAMBERT Academic Publishing, 2011

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Bibliographic Details

• Title: INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS: Microelectronic device applications
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2011
• Language: English
• ISBN 10: 3843394229
• ISBN 13: 9783843394222
• Binding: Paperback
• Condition: Like New
• Book Type: book

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Synopsis

High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.

About the Author

I, Dr. S.V. Jagadeesh Chandra published 18 scientific papers on challenges in the improvement of interface quality at high-k/semiconductor stack for microelectronic device applications. I got my doctorate under the guidance of Prof.Uthanna and Prof.Mohan Rao. Now I am working with Prof.C.J.Choi, SPRC, Chonbuk NationalUniversity, Korea.