Improved Performance of AlGaInP LEDs Using Various Process Techniques | The main purpose of this book is to improve external quantum efficiency of LEDs by investigating several different fabrication methods

Shun-Cheng Hsu

ISBN 10: 3843358362 / ISBN 13: 9783843358361

Published by LAP LAMBERT Academic Publishing, 2010

About this Item

Improved Performance of AlGaInP LEDs Using Various Process Techniques | The main purpose of this book is to improve external quantum efficiency of LEDs by investigating several different fabrication methods | Shun-Cheng Hsu | Taschenbuch | 132 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843358361 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Seller Inventory # 107243471

Bibliographic Details

• Title: Improved Performance of AlGaInP LEDs Using Various Process Techniques | The main purpose of this book is to improve external quantum efficiency of LEDs by investigating several different fabrication methods
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2010
• Language: English
• ISBN 10: 3843358362
• ISBN 13: 9783843358361
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 9D millimeters 220 millimeters width by 150 millimeters height by 9 millimeters depth
• Weight: 215 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional ?wavelike? surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.

About the Author

Shun-Cheng Hsu received Ph.D. degree in deparment of materials science and egineering from National Chung Hsing University, Taiwan, R.O.C. in 2009.