Intelligent Integrated Systems: Devices, Technologies, and Architectures
Language: English
Published by PAN STANFORD PUB, 2014
Series: Book 2 of 4 - Jenny Stanford Series on Intelligent Nanosystems
- Hardcover
- Used

Condition: Used - Fine
US$ 136.92
Quantity: 1 available
Add to basketItem description from seller
Zustand: Sehr gut | Seiten: 516 | Sprache: Englisch | Produktart: Bücher | This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.
Seller Inventory # 23411995/2
- Title
- Intelligent Integrated Systems: Devices, Technologies, and Architectures
- Author
- Unbekannt
- Publisher
- PAN STANFORD PUB
- Publication year
- 2014
- Condition
- Sehr gut
- Binding
- Hardcover
- Language
- English
- ISBN 10
- 9814411426
- ISBN 13
- 9789814411424
- Series
- Book 2 of 4: Jenny Stanford Series on Intelligent Nanosystems
- Seller catalogs
- Bücher
A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.
"Synopsis" may belong to another edition of this title.
About the Author
Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981–1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016. A recipient of several awards and honors, and erstwhile associate editor of the IEEE Transactions on Electron Devices (2008-2014), Prof. Deleonibus is research director of the CEA since 2002, a distinguished lecturer at IEEE since 2004, and a fellow of the IEEE since 2006 and of the Electrochemical Society since 2015.
"About the title" may belong to another edition of this title.
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