Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Peter Pichler

ISBN 10: 3709172047 / ISBN 13: 9783709172049

Published by Springer Vienna, 2012

About this Item

Druck auf Anfrage Neuware - Printed after ordering - Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

Seller Inventory # 9783709172049

Bibliographic Details

• Title: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
• Publisher: Springer Vienna
• Publication Date: 2012
• Language: English
• ISBN 10: 3709172047
• ISBN 13: 9783709172049
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 254W x 178H x 32D millimeters 254 millimeters width by 178 millimeters height by 32 millimeters depth
• Weight: 1090 grams

About this title

Synopsis

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.