Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.Books on Demand GmbH, �berseering 33, 22297 Hamburg 60 pp. Englisch.

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Bibliographic Details

Title: Introduction to Junctionless Double Gate MOSFET
Publisher: LAP LAMBERT Academic Publishing M�r 2019
Publication Date: 2019
Language: English
ISBN 10: 6139462487
ISBN 13: 9786139462483
Binding: Taschenbuch
Condition: Neu
Dimensions: 220 millimeters width by 150 millimeters height by 4 millimeters depth
Weight: 107 grams

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The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.

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