Investigation On Schottky-Barrier Mosfets For Memory Application: Schottky-Barrier Flash Memory

Choi, Sung-Jin; Choi, Yang-Kyu; Choi, Sung-Jin; Choi, Yang-Kyu

ISBN 10: 3843377472 / ISBN 13: 9783843377478

Published by Lap Lambert Academic Publishing, 2010

About this Item

100 pages. 8.66x5.91x0.23 inches. In Stock.

Seller Inventory # __3843377472

Bibliographic Details

• Title: Investigation On Schottky-Barrier Mosfets For Memory Application: Schottky-Barrier Flash Memory
• Publisher: Lap Lambert Academic Publishing
• Publication Date: 2010
• Language: English
• ISBN 10: 3843377472
• ISBN 13: 9783843377478
• Binding: Paperback
• Condition: Brand New
• Weight: 0.2 kilograms

About this title

Synopsis

The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.

About the Author

Sung-Jin Choi is currently working toward the Ph.D. degree in the department of electrical engineering, KAIST, Daejeon, Korea. His current research interests include Schottky-barrier devices, capacitor-less DRAM, bio-sensors, and nanowire electronics.