Very Large Scale Integration Electronics: Plasma Processing for VLSI v. 8 (V L S I Electronics)

Norman G. Einspruch

ISBN 10: 0122341082 / ISBN 13: 9780122341083

Published by Academic Press Inc, 1984

About this Item

Ancien livre de bibliothèque. Légères traces d'usure sur la couverture. Edition 1984. Tome 8. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Slight signs of wear on the cover. Edition 1984. Volume 8. Ammareal gives back up to 15% of this item's net price to charity organizations.

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Bibliographic Details

• Title: Very Large Scale Integration Electronics: Plasma Processing for VLSI v. 8 (V L S I Electronics)
• Publisher: Academic Press Inc
• Publication Date: 1984
• Language: English
• ISBN 10: 0122341082
• ISBN 13: 9780122341083
• Binding: Hardcover
• Condition: Bon

About this title

Synopsis

VLSI Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.