MIS Heterojunction Devices

Ibrahim R. Agool

ISBN 10: 3659262722 / ISBN 13: 9783659262722

Published by LAP LAMBERT Academic Publishing Okt 2012, 2012

About this Item

This item is printed on demand - it takes 3-4 days longer - Neuware -In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature. 124 pp. Englisch.

Seller Inventory # 9783659262722

Bibliographic Details

• Title: MIS Heterojunction Devices
• Publisher: LAP LAMBERT Academic Publishing Okt 2012
• Publication Date: 2012
• Language: English
• ISBN 10: 3659262722
• ISBN 13: 9783659262722
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 8D millimeters 220 millimeters width by 150 millimeters height by 8 millimeters depth
• Weight: 203 grams

About this title

Synopsis

In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature.

About the Author

Ibrahim R. Agool received the B.Sc degree in Physics AL-Mustansiriyah University, Baghdad , Iraq in 1973, M.Sc degrees in Aston University in Birmingham, U.K in 1982 and Ph.D degrees in Heriot-Watt University United Kingdom 1991 respectively.Marwa Abdul Muhsien Hassan Al-Janabireceived the B.Sc degree in physics from Al-Mustansiriyah university,Iraq in 2007 and M.Sc degree in Department of Physics fromAl-Mustansiriyah university, Iraq in 2007 and 2009 respectively.Evan T. Salem received the B.Sc degree in laser physics, University of technology, Applied Sciencedepartment , laser and optoelectronic branch, Iraq in 1998, M.Sc and Ph.D degrees in laser physics, University of technology, Applied Sciencedepartment , laser and optoelectronic branch, Iraq in 2001 and 2006 respectively.