MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES: USING SILVACOŠ ATLAS TCAD

Stephen B Bayne, Bejoy N Pushpakaran

ISBN 10: 9813237821 / ISBN 13: 9789813237827

Published by World Scientific Publishing Co Pte Ltd, SG, 2019

About this Item

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using SilvacoŠ ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of SilvacoŠ ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s).

Seller Inventory # LU-9789813237827

Bibliographic Details

• Title: MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES: USING SILVACOŠ ATLAS TCAD
• Publisher: World Scientific Publishing Co Pte Ltd, SG
• Publication Date: 2019
• Language: English
• ISBN 10: 9813237821
• ISBN 13: 9789813237827
• Binding: Hardback
• Condition: New

About this title

Synopsis

This book is intended for students, researchers and semiconductor professionals and aims to shorten the learning cycle required to start off successful Silicon Carbide (SiC) device simulation. It explains SiC device simulation using Silvaco ATLAS TCAD software to provide a comprehensive understanding of the process of wide bandgap SiC semiconductor device modeling. This book covers modeling techniques, simulation models and parameters, and source code for device simulations, with focus on non-isothermal transient simulations to predict and analyze heat dissipation and lattice temperature rise in a SiC power device under switching condition.

Readership: This book is intended for students at all levels (undergraduate, graduate and research) as well as professionals.