MOS Interface Physics, Process and Characterization

Shengkai Wang (u. a.)

ISBN 10: 103210628X / ISBN 13: 9781032106281

Published by CRC Press, 2024

About this Item

MOS Interface Physics, Process and Characterization | Shengkai Wang (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2024 | CRC Press | EAN 9781032106281 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.

Seller Inventory # 128484426

Bibliographic Details

• Title: MOS Interface Physics, Process and Characterization
• Publisher: CRC Press
• Publication Date: 2024
• Language: English
• ISBN 10: 103210628X
• ISBN 13: 9781032106281
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 229W x 152H x 10D millimeters 229 millimeters width by 152 millimeters height by 10 millimeters depth
• Weight: 262 grams
• Seller catalogs:
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About this title

Synopsis

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.

This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.

This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

About the Author

Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.