MOS Interface Physics, Process and Characterization

Wang, Shengkai, Wang, Xiaolei

ISBN 10: 103210628X / ISBN 13: 9781032106281

Published by CRC Press, 2021

About this Item

New.

Seller Inventory # ERICA800103210628X6

Bibliographic Details

• Title: MOS Interface Physics, Process and Characterization
• Publisher: CRC Press
• Publication Date: 2021
• Language: English
• ISBN 10: 103210628X
• ISBN 13: 9781032106281
• Binding: paperback
• Condition: New
• Book Type: book

About this title

Synopsis

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.

This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.

This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

About the Author

Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.