MOSFET Models

Liu

ISBN 10: 0471396974 / ISBN 13: 9780471396970

Published by John Wiley & Sons Feb 2001, 2001

About this Item

Neuware - Beim integrierten Schaltkreisdesign spielt die Schaltkreissimulation eine wesentliche Rolle, wobei deren Genauigkeit von der Genauigkeit des verwendeten Transistormodells abhängig ist. BSIM3 (BSIM steht für Berkley Short-channel IGFET Model) wurde als erstes MOSFET Modell zur Standardisierung ausgewählt. Es wird erwartet, daß in den kommenden Jahren viele Halbleiterunternehmen zu BSIM3 wechseln.Dieses Buch erläutert die technischen Einzelheiten von BSIM 3, warum sich die meisten Unternehmen für dieses Modell entscheiden und wo es eingesetzt werden kann. Eines der fünf Kapitel widmet sich BSIM4, dem Nachfolgemodell von BSIM3.

Seller Inventory # 9780471396970

Bibliographic Details

• Title: MOSFET Models
• Publisher: John Wiley & Sons Feb 2001
• Publication Date: 2001
• Language: English
• ISBN 10: 0471396974
• ISBN 13: 9780471396970
• Binding: Buch
• Condition: Neu
• Dimensions: 240W x 161H x 37D millimeters 240 millimeters width by 161 millimeters height by 37 millimeters depth
• Weight: 1065 grams

About this title

Synopsis

An expert guide to understanding and making optimum use of BSIM

Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4.

Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He:

• Summarizes key BSIM3 components
• Represents the BSIM3 model with equivalent circuits for various operating conditions
• Provides a comprehensive glossary of modeling terminology
• Lists alphabetically BSIM3 parameters along with their meanings and relevant equations
• Explores BSIM3's flaws and provides improvement suggestions
• Describes all of BSIM4's improvements and new features
• Provides useful SPICE files, which are available online at the Wiley ftp site

About the Author

WILLIAM LIU, PhD, is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has been TI's lead contact in mentoring the development of BSIM4 model equations with UC Berkeley, and has been in charge of the modeling development for LDMOS/DEMOS and RF-CMOS in TI's SPICE Modeling Laboratory. Dr. Liu has authored/coauthored five book chapters, and has written more than fifty journal papers on modeling, device characterization, and fabrication. Dr. Liu has also published two books on III-V device technologies. Dr. Liu holds sixteen U.S. patents and is a senior member of IEEE.