Microelectronic Materials and Processes (NATO ASI Series E: Applied Sciences, Volume 164)

Levy, R.A., editor

ISBN 10: 0792301471 / ISBN 13: 9780792301479

Published by Kluwer Academic Publishers, 1989

About this Item

Hardcover; Proceedings of the NATO Advanced Study Institute on Microelectronic Materials and Processes, held in Il Ciocco, Castelvecchio Pascoli, Italy, June 30-July 11, 1986. Light fading, scuffing, and shelf wear to exterior; former owner's stamping on front endpaper and copyright page; fade spots to endpapers and page edges; in very good condition with clean text, firm binding. No dust jacket.

Seller Inventory # 102313

Bibliographic Details

• Title: Microelectronic Materials and Processes (NATO ASI Series E: Applied Sciences, Volume 164)
• Publisher: Kluwer Academic Publishers
• Publication Date: 1989
• Language: English
• ISBN 10: 0792301471
• ISBN 13: 9780792301479
• Binding: Hardcover
• Condition: UsedVeryGood

About this title

Synopsis

The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.