Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

Ao Zhang, Jianjun Gao

ISBN 10: 9811255350 / ISBN 13: 9789811255359

Published by World Scientific Publishing Co Pte Ltd, SG, 2023

About this Item

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Seller Inventory # LU-9789811255359

Bibliographic Details

• Title: Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices
• Publisher: World Scientific Publishing Co Pte Ltd, SG
• Publication Date: 2023
• Language: English
• ISBN 10: 9811255350
• ISBN 13: 9789811255359
• Binding: Hardback
• Condition: New
• Dimensions: 6W x 0.75H x 9D inches 6 inches width by 0.75 inches height by 9 inches depth

About this title

Synopsis

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.