Modelling of basic parameters for non-conventional MOSFETs

Language: English

Published by LAP LAMBERT Academic Publishing Jul 2023, 2023

6206739813 / 9786206739814

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This item is printed on demand - Print on Demand Titel. Neuware -In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 64 pp. Englisch.

Seller Inventory # 9786206739814

Title
Modelling of basic parameters for non-conventional MOSFETs
Author
Swapnadip De
Publisher
LAP LAMBERT Academic Publishing Jul 2023
Publication year
2023
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6206739813
ISBN 13
9786206739814
Item weight
113 grams
Dimensions
220x150x4 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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