Monte Carlo Device Simulation | Full Band and Beyond

Karl Hess

ISBN 10: 1461368006 / ISBN 13: 9781461368007

Published by Springer, 2012

About this Item

Monte Carlo Device Simulation | Full Band and Beyond | Karl Hess | Taschenbuch | The Springer International Series in Engineering and Computer Science | x | Englisch | 2012 | Springer | EAN 9781461368007 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Seller Inventory # 105720918

Bibliographic Details

• Title: Monte Carlo Device Simulation | Full Band and Beyond
• Publisher: Springer
• Publication Date: 2012
• Language: English
• ISBN 10: 1461368006
• ISBN 13: 9781461368007
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 235W x 155H x 18D millimeters 235 millimeters width by 155 millimeters height by 18 millimeters depth
• Weight: 493 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil­ ity related hot-electron effects in MOSFETs cannot be understood satisfac­ torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro­ the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten­ tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.