Multi-run Memory Tests for Pattern Sensitive Fault
Mrozek, Ireneusz
Sold by Basi6 International, Irving, TX, U.S.A.
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Add to basketSold by Basi6 International, Irving, TX, U.S.A.
AbeBooks Seller since June 24, 2016
Condition: New
Quantity: 10 available
Add to basketNew. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
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This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
Ireneusz Mrozek received his M.Sc. and Ph.D. degrees in computer science in 1994 and 2004,respectively. Since 1994 he has been employed at the Faculty of Computer Science of Bialystok Technical University (Poland). His main research interests include the area of diagnostic testing of embedded memories. Particularly, he focuses on transparent tests for RAM as well as the application of these in the BIST or BISR schemes. He has also gained industrial experience working as a Senior Software Engineer at Motorola Solutions.
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