Multigrid Methods for Process Simulation (Computational Microelectronics)

Wolfgang Joppich

ISBN 10: 3709192552 / ISBN 13: 9783709192559

Published by Springer 2013-10-04, 2013

About this Item

Seller Inventory # 6666-IUK-9783709192559

Bibliographic Details

• Title: Multigrid Methods for Process Simulation (Computational Microelectronics)
• Publisher: Springer 2013-10-04
• Publication Date: 2013
• Language: English
• ISBN 10: 3709192552
• ISBN 13: 9783709192559
• Binding: Paperback
• Condition: New

About this title

Synopsis

It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in­ dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a "delayed acceptance, resent­ ments" with respect to multigrid algorithms. They complain: "Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications." In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa­ tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is "accepted", if there exist "professional" programs for research and production purposes. "Professional" in this context stands for "solving complex technical prob­ lems in an industrial environment by a large community of users". Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.