Novel NanoScale MOSFET with TCAD | Use of TCAD tool for the fabrication of nanoscale bulk MOSFET and Its Performance Investigation

Intekhab Amin (u. a.)

ISBN 10: 3659197866 / ISBN 13: 9783659197864

Published by LAP Lambert Academic Publishing, 2012

About this Item

Novel NanoScale MOSFET with TCAD | Use of TCAD tool for the fabrication of nanoscale bulk MOSFET and Its Performance Investigation | Intekhab Amin (u. a.) | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783659197864 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.

Seller Inventory # 106316194

Bibliographic Details

• Title: Novel NanoScale MOSFET with TCAD | Use of TCAD tool for the fabrication of nanoscale bulk MOSFET and Its Performance Investigation
• Publisher: LAP Lambert Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3659197866
• ISBN 13: 9783659197864
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 8W x 150H x 220D millimeters 8 millimeters width by 150 millimeters height by 220 millimeters depth
• Weight: 182 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect. Here work have been carried by doing engineering fabrication technique to reduce its SCE under 40nm channel length of an engineered device and is compared the non engineered device of having same technology to have better short channel immunity of an engineered device as compared to that of non engineered device. Since scaling means scaling of its supply voltage also if not then electric field will become a severe factor creates impact ionization and hence its performance by creating electron-holes pair so supply voltage has to be scaled down to reduce peak electric field.Its high frequency small signal analysis is also carried and compared.

About the Author

The author have done A.M.I.E in Electronics & Communication Engineering and was project associate at IIT Madras in the department of Electrical Engineering, he also did his M.Tech from Z.H.C.E.T AMU aligarh and presently (2012) doing his Ph.D from NITJ.