Title: Optical Properties of III?V Semiconductors: The Influence of Multi-Valley Band Structures (Springer Series in Solid-State Sciences, 120)
Publisher: Springer
Publication Date: 1995
Language: English
ISBN 10: 3540602291
ISBN 13: 9783540602293
Binding: hardcover
Condition: New
Weight: 37 ounces

About this title

Synopsis

Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.

From the Back Cover

Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on performance features in opto-electronic devices. The optical response of such materials with multi-valley band structures is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole droplet formation, etc. The discussion is self-consistent with the dynamics of excitons and carriers from intervalley compiling.

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