Optoelectronic Properties of Gaussian DQWell for RTD Application

Arpan Deyasi

ISBN 10: 3659979376 / ISBN 13: 9783659979378

Published by LAP LAMBERT Academic Publishing Okt 2016, 2016

About this Item

Neuware -In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.Books on Demand GmbH, Überseering 33, 22297 Hamburg 204 pp. Englisch.

Seller Inventory # 9783659979378

Bibliographic Details

• Title: Optoelectronic Properties of Gaussian DQWell for RTD Application
• Publisher: LAP LAMBERT Academic Publishing Okt 2016
• Publication Date: 2016
• Language: English
• ISBN 10: 3659979376
• ISBN 13: 9783659979378
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 13D millimeters 220 millimeters width by 150 millimeters height by 13 millimeters depth
• Weight: 322 grams

About this title

Synopsis

In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.

About the Author

Arpan Deyasi is presently working as Asst Prof in the Dept of ECE in RCCIIT, INDIA. He has 11.5 years of professional experience. He received B.Sc(Hons), B.Tech, M.Tech from University of Calcutta. He is working in the area of semiconductor nanostructure and semiconductor photonics. He has published more than 150 research papers with 2 monographs.