Optoelectronic Properties of Gaussian DQWell for RTD Application

Arpan Deyasi (u. a.)

ISBN 10: 3659979376 / ISBN 13: 9783659979378

Published by LAP LAMBERT Academic Publishing, 2016

Optoelectronic Properties of Gaussian DQWell for RTD Application | Arpan Deyasi (u. a.) | Taschenbuch | 204 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659979378 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 107808248

Synopsis:

In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.

About the Author: Arpan Deyasi is presently working as Asst Prof in the Dept of ECE in RCCIIT, INDIA. He has 11.5 years of professional experience. He received B.Sc(Hons), B.Tech, M.Tech from University of Calcutta. He is working in the area of semiconductor nanostructure and semiconductor photonics. He has published more than 150 research papers with 2 monographs.

Bibliographic Details

Title: Optoelectronic Properties of Gaussian DQWell...
Publisher: LAP LAMBERT Academic Publishing
Publication Date: 2016
Binding: Taschenbuch
Condition: Neu