Paperback. Pub Date: 2020-10-01 Pages: 326 Language: Chinese Publisher: National Defense Industry Press Transistor Nonlinear Model Parameter Extraction Technology aims to provide a comprehensive overview of transistor model parameter extraction: On the one hand. the basic premise is the parameter The extraction is as important as the establishment of a physical model based on itself; on the other hand. even for different technologies. the extraction methods are often based on the same ideas a.

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Bibliographic Details

Title: Parameter Extraction Technology of Transistor Nonlinear Model(Chinese Edition)
Publisher: National Defense Industry Press
Publication Date: 2020
Language: Chinese
ISBN 10: 7118120677
ISBN 13: 9787118120677
Binding: paperback
Condition: New

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Defense Industry Pub 2020-10-01 326 Chinese National Defense Industry Press Transistor Nonlinear Model Parameter Extraction Technology aims to provide a comprehensive overview of transistor model parameter On t...

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