Performance Analysis of InP Based Hemt Devices in Nano Regime | Advanced device for sub millimeter wave applications

Saravana Kumar R. (u. a.)

ISBN 10: 6200549982 / ISBN 13: 9786200549983

Published by LAP LAMBERT Academic Publishing, 2020

About this Item

Performance Analysis of InP Based Hemt Devices in Nano Regime | Advanced device for sub millimeter wave applications | Saravana Kumar R. (u. a.) | Taschenbuch | 108 S. | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786200549983 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Seller Inventory # 118041992

Bibliographic Details

• Title: Performance Analysis of InP Based Hemt Devices in Nano Regime | Advanced device for sub millimeter wave applications
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2020
• Language: English
• ISBN 10: 6200549982
• ISBN 13: 9786200549983
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 8D millimeters 220 millimeters width by 150 millimeters height by 8 millimeters depth
• Weight: 179 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.