Photo-induced Defects in Semiconductors: 4 (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 4) This book is in very good condition and will be shipped within 24 hours of ordering. The cover may have some limited signs of wear but the pages are clean, intact and the spine remains undamaged. This book has clearly been well maintained and looked after thus far. Money back guarantee if you are not satisfied. See all our books here, order more than 1 book and get discounted shipping.

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Bibliographic Details

Title: Photo-induced Defects in Semiconductors: 4 (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Series Number 4)
Publisher: -
Publication Date: 1996
Language: English
ISBN 10: 0521461960
ISBN 13: 9780521461962
Binding: Hardcover
Condition: Very Good

About this title

Synopsis

This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

From the Back Cover

Photoinduced Defects in Semiconductors is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors that can be created or destroyed by light.

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