Physical Properties of N-Type GaP Single Crystal semiconductor | Electrical, Thermal, Optical and Magneto-optical and thermal properties of GaP Semiconductor

Mustafa Saeed Omar (u. a.)

ISBN 10: 3843351694 / ISBN 13: 9783843351690

Published by LAP LAMBERT Academic Publishing, 2010

About this Item

Physical Properties of N-Type GaP Single Crystal semiconductor | Electrical, Thermal, Optical and Magneto-optical and thermal properties of GaP Semiconductor | Mustafa Saeed Omar (u. a.) | Taschenbuch | 132 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843351690 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Seller Inventory # 107288336

Bibliographic Details

• Title: Physical Properties of N-Type GaP Single Crystal semiconductor | Electrical, Thermal, Optical and Magneto-optical and thermal properties of GaP Semiconductor
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2010
• Language: English
• ISBN 10: 3843351694
• ISBN 13: 9783843351690
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 9D millimeters 220 millimeters width by 150 millimeters height by 9 millimeters depth
• Weight: 215 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Investigation of the physical properties on an n- type GaP single crystal semiconductor compound is given. The magneto-optical properties, magneto photoconductivity, Hall effect as well as Seebeck and Nernst effects are measured for the same sample. A constructed basic experimental set-up for conducting these measurements is shown. An optical cryostat which is capable to control the sample temperature in the range of (200-340 K) is shown. The cryostat is also suitable for measuring electrical as well as thermal measurements. Results of energy gap is obtained from both optical absorption method and photoconductivity measurements for zero and under the influence of a magnetic field .Reduced effective mass from both the magneto-optical and magneto-photoconductivity technique is given and explained. From the combination between electrical and thermal experiments, the method of four coefficients (Conductivity, Hall effect, Seebeck and Nernst) is explained as a direct measurement for both the density of state effective mass and the scattering parameter.

About the Author

Dr Omar is an asst. Prof. of Semiconductors at Salahaddin University. He received a PhD degree in Compound Semiconductors from the University of Bath, He is a leader of compound semiconductors and nanoscale research group. Dr Abbas is an asst. Prof. in semiconductors in Salahaddin University, he is leading a research on thin films . .