Physics of Ferroelectrics

Karin M. Rabe

ISBN 10: 3540345906 / ISBN 13: 9783540345909

Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg Jul 2007, 2007

About this Item

This item is printed on demand - Print on Demand Titel. Neuware -During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 404 pp. Englisch.

Seller Inventory # 9783540345909

Bibliographic Details

• Title: Physics of Ferroelectrics
• Publisher: Springer Berlin Heidelberg, Springer Berlin Heidelberg Jul 2007
• Publication Date: 2007
• Language: English
• ISBN 10: 3540345906
• ISBN 13: 9783540345909
• Binding: Buch
• Condition: Neu
• Dimensions: 241W x 160H x 31D millimeters 241 millimeters width by 160 millimeters height by 31 millimeters depth
• Weight: 844 grams

About this title

Synopsis

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

From the Back Cover

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.