Physics of Ferroelectrics: A Modern Perspective

Rabe, Karin (Editor)/ Ahn, Charles H. (Editor)/ Triscone, Jean-marc (Editor)

ISBN 10: 3540345906 / ISBN 13: 9783540345909

Published by Springer Verlag, 2007

About this Item

1st edition. 388 pages. 9.75x6.25x1.00 inches. In Stock.

Seller Inventory # x-3540345906

Bibliographic Details

• Title: Physics of Ferroelectrics: A Modern Perspective
• Publisher: Springer Verlag
• Publication Date: 2007
• Language: English
• ISBN 10: 3540345906
• ISBN 13: 9783540345909
• Binding: Hardcover
• Condition: Brand New
• Weight: 0.74 kilograms

About this title

Synopsis

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

From the Back Cover

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.