Physics and Technology of Heterojunction Devices

ISBN 10: 0863412041 / ISBN 13: 9780863412042

Published by INSTITUTION OF ENGINEERING & T, 1991

About this Item

&Uumlber den AutorrnrnThe editors are joint directors of the III-V Semiconductor and Microelectronics Centre at Cardiff.Inhaltsverzeichnisrnrnn Chapter 1: Aspects of the physics of heterojunctionsn Ch.

Seller Inventory # 520996119

Bibliographic Details

• Title: Physics and Technology of Heterojunction Devices
• Publisher: INSTITUTION OF ENGINEERING & T
• Publication Date: 1991
• Language: English
• ISBN 10: 0863412041
• ISBN 13: 9780863412042
• Binding: Gebunden
• Condition: New

About this title

Synopsis

Physics and Technology of Heterojunction Devices brings together the physics of engineering aspects of heterojunction semiconductor devices in one volume.

The book draws on the knowledge of various experienced academics, and covers aspects of the physics of heterojunctions, resonant tunnelling effects in semiconductor heterojunction devices, characterisation of heterojunctions, high electron mobility transistors, heterojunction bipolar transistors, and heterostructures in semiconductor lasers.

This valuable text is suitable for post-graduate device and electronic circuit engineers, and final year undergraduates.

About the Authors

David Vernon Morgan obtained his BSc and MSc degrees at the University of Wales, his PhD at the University of Cambridge and his DSc(Eng) at the University of Leeds. He held a University of Wales Fellowship at the Cavendish Laboratory, Cambridge (1966-68) and a Harwell Fellowship (1968-70), and until August 1985 was a Reader in Electronic Engineering at the University of Leeds. He is currently Professor of Microelectronics at the University of Wales College of Cardiff. He has been a visiting scientist at Chalk River Nuclear Laboratory, Canada, and visiting Professor at Cornell University, USA. His research interests include the physics and technology of semiconductor materials and devices with particular interest in microwave devices. He is a fellow of the Institute of Physics, a Fellow of the IEE and a Senior Member of the IEEE.

Robin H. Williams obtained his BSc(Hons.) and PhD degrees at the University College of North Wales, Bangor. In 1968 he was appointed to a Lectureship in Physics at the New University of Ulster, Coleraine, and in 1978 was elected Professor of Physics at the same university. In 1984 he was appointed Professor of Physics and Head of Department at University College, Cardiff.

Professor Williams has spent study leave at the Max Planck Institute Stuttgart (1975), at the Xerox laboratory in Palo Alto USA (1979) and as an IBM Visitor in 1980. He is a Chartered Physicist and a Fellow of the Institute of Physics. In 1990 he was elected to the Fellowship of the Royal Society.