Point Defects in Semiconductors and Insulators

Overhof Harald Spaeth Johann-Martin

ISBN 10: 3540426957 / ISBN 13: 9783540426950

Published by Springer, 2003

About this Item

Print on Demand pp. 508 279 Illus.

Seller Inventory # 5828568

Bibliographic Details

• Title: Point Defects in Semiconductors and Insulators
• Publisher: Springer
• Publication Date: 2003
• Language: English
• ISBN 10: 3540426957
• ISBN 13: 9783540426950
• Binding: Hardcover
• Condition: New

About this title

Synopsis

The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap­ peared about 10 years ago. Since then a very active development has oc­ curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor­ rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth­ ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc­ tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

From the Back Cover

This book introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy that are essential for applications used to determine  microscopic defect structures. Many different magnetic resonance methods are required for investigating the microscopic and electronic properties of solids and uncovering correlations between those properties. In addition to EPR such methods include electron nuclear double resonance (ENDOR), electronically and optically detected EPR (the latter is known as ODENDOR), and electronically and optically detected ENDOR. This book comprehensively discusses experimental, technological, and theoretical aspects of these techniques from a practical point of view with many illustrative examples taken from semiconductors and insulators. The non-specialist is informed about the potential of the different methods. A researcher finds practical help in the application of commercial apparatus as well as useful guidance from ab initio theory for the task of deriving structure models from experimental data.