Power Semiconductor Technology in Pulsed Power Applications (eng)

This book provides students and professionals, including pulsed power designers, with a complete overview of advanced semiconductor devices that can improve the performance of pulsed power systems. The development and advancement of pulsed power technology was driven by research into nuclear fusion and military applications. As technology advances, pulsed power systems are finding their way into industrial and commercial applications. The book begins with a detailed discussion of various applications of pulsed power technology with a primary focus on nuclear fusion. Historically, traditional pulsed-power switches (spark gaps, thyratrons, ignitrons, etc.) have been used in such pulsed power systems. A comparative analysis of the cost and performance specifications of wide bandgap solid-state devices and traditional switches and a review of various pulsed-power architectures is provided. The superior properties of advanced wide bandgap material have enabled the development of high-power, high-temperature, and fast-switching semiconductor devices. Based on the successful integration of wide bandgap technology in high-power traction and renewable energy applications, wide bandgap solid-state switches have the potential to have a profound impact on pulsed-power systems; however, this modern technology introduces added complexity with respect to design, fabrication, and packaging of the semiconductor. The concluding chapters of this book will provide readers with an in-depth look into the key aspects and challenges associated with wide bandgap device fabrication and packaging.

Dr. Stephen B. Bayne received his Ph.D., MS, and BS in Electrical Engineering from Texas Tech University (TTU).  After completing his doctoral studies, he joined the Naval Research Lab (NRL) as an electronics engineer, focusing on designing advanced power electronics systems for space power applications.  After two and a half years, Dr. Bayne transferred to the Army Research Lab (ARL), where he was instrumental in developing a high-temperature power electronics program.  He was later promoted to Team Lead at ARL, leading a team of five engineers dedicated to power components research. In his capacity as Team Leader, Dr. Bayne was responsible for advanced research in high-temperature and advanced power devices for army applications.  After one and a half years in this role, Dr. Bayne was promoted to Branch Chief of the Directed Energy Branch.  After eight years at the ARL, Dr. Bayne transitioned to academia, where he currently holds the position of Vice Chancellor for Innovation and Collaboration and Executive Director of the Institute for Critical Infrastructure Security.  Dr. Bayne is also the director of the Energy Pillar of the National Wind Institute.  He also received the prestigious John R. Bradford Endowed Chair in Engineering.  During his academic tenure, Dr. Bayne served as the Chair of Electrical and Computer for two years and the Interim Dean of the College of Engineering at TTU for one year.  In this role, he successfully managed a sizable academic community, overseeing 4,800 undergraduate, 1,442 graduate students, and 257 faculty and staff members.  Dr. Bayne’s research interests at Texas Tech include Power Electronics, Pulsed Power, Power Semiconductors, and Renewable Energy.

Dr. Bejoy N. Pushpakaran received his bachelor’s degree in Electronics and Communication Engineering from Cochin University of Science and Technology, India and his MS and Ph.D. degrees in Electrical Engineering from Texas Tech University. During his graduate studies, he was with the Center for Pulsed Power and Power Electronics at Texas Tech University, where his research focused on Technology Computer Aided Design (TCAD) modeling and simulation of Silicon Carbide (SiC) power devices and pulsed power evaluation of research-grade and commercial SiC power semiconductor devices. After completing his doctoral studies, Dr. Pushpakaran joined X-FAB Texas as the SiC Process Development Engineer responsible for semiconductor fabrication projects aimed toward the commercialization of SiC technology by enabling the processing and fabrication of SiC power devices on state-of-the-art 6-inch wafers with the support of PowerAmerica institute. After 5 years at X-FAB Texas, Dr. Pushpakaran joined onsemi as the Sr. Principal Applications Engineer in the Automotive Traction Solutions division, where he is currently supporting new product definition, advanced technology research and development, and performance improvement activities, including electrical and thermal evaluation of high-power SiC and IGBT modules for traction inverter application. Dr. Pushpakaran has authored a textbook on TCAD modeling of SiC power devices using Silvaco© ATLAS. His research interests include TCAD modeling, thermal characterization, reliability testing, and pulsed power evaluation of SiC power devices.