Predictive Simulation of Semiconductor Processing

Eicke R. Weber

ISBN 10: 3540204814 / ISBN 13: 9783540204817

Published by Springer Berlin Heidelberg, Springer Berlin Heidelberg Mai 2004, 2004

About this Item

Neuware -Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 516 pp. Englisch.

Seller Inventory # 9783540204817

Bibliographic Details

• Title: Predictive Simulation of Semiconductor Processing
• Publisher: Springer Berlin Heidelberg, Springer Berlin Heidelberg Mai 2004
• Publication Date: 2004
• Language: English
• ISBN 10: 3540204814
• ISBN 13: 9783540204817
• Binding: Buch
• Condition: Neu
• Dimensions: 241W x 160H x 36D millimeters 241 millimeters width by 160 millimeters height by 36 millimeters depth
• Weight: 1028 grams

About this title

Synopsis

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

About the Author

J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), "Silicon surfaces and formation of interfaces; basic science in the industrial world" (World Scientific, 2000). Editor (book) , ""Recent Developments in Vacuum Science and Technology" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr₂O₃) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.