Process and Device Simulation for MOS-VLSI Circuits

Language: English

Published by Springer Netherlands, Springer, 2011

9400968442 / 9789400968448

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Druck auf Anfrage Neuware - Printed after ordering - P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.

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Title
Process and Device Simulation for MOS-VLSI Circuits
Author
P. Antognetti
Publisher
Springer Netherlands, Springer
Publication year
2011
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
9400968442
ISBN 13
9789400968448
Item weight
949 grams
Dimensions
235x155x34 mm

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