Progress in SOI Structures and Devices Operating at Extreme Conditions

. Ed(s): Balestra, Francis; Nazarov, Alexei N. (National Academy of Science of Ukraine); Lysenko, Vladimir S.

ISBN 10: 1402005768 / ISBN 13: 9781402005763

Published by Kluwer Academic Publishers, 2002

About this Item

Proceedings of the NATO Advanced Research Workshop, held in Kyiv, Ukraine, October 15-20, 2000 Editor(s): Balestra, Francis; Nazarov, Alexei N. (National Academy of Science of Ukraine); Lysenko, Vladimir S. Series: NATO Science Series II. Num Pages: 351 pages, biography. BIC Classification: TJFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 19. Weight in Grams: 516. . 2002. Softcover reprint of the original 1st ed. 2002. Paperback. . . . .

Seller Inventory # V9781402005763

Bibliographic Details

• Title: Progress in SOI Structures and Devices Operating at Extreme Conditions
• Publisher: Kluwer Academic Publishers
• Publication Date: 2002
• Language: English
• ISBN 10: 1402005768
• ISBN 13: 9781402005763
• Binding: Soft cover
• Condition: New

About this title

Synopsis

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.