Progress in Soi Structures and Devices Operating at Extreme Conditions

Language: English

Published by Springer Apr 2002, 2002

140200575X / 9781402005756

Series: Book 225 of 241 - NATO Science Series II: Mathematics, Physics and Chemistry

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Neuware - A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Seller Inventory # 9781402005756

Title
Progress in Soi Structures and Devices Operating at Extreme Conditions
Author
Alexei N Nazarov
Publisher
Springer Apr 2002
Publication year
2002
Condition
Neu
Binding
Buch
Language
English
ISBN 10
140200575X
ISBN 13
9781402005756
Item weight
708 grams
Dimensions
251x162x25 mm
Series
Book 225 of 241: NATO Science Series II: Mathematics, Physics and Chemistry

AHA-BUCH GmbH

Einbeck, Germany

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AbeBooks seller since August 14, 2006

Shipping rates from Germany to U.S.A.

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