Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.

Review

"...presents the best available data on the properties of InP which may be used, for example, in the theoretical simulation of device characteristics." (International Journal of Electronics)

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