RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY Â " THEORY AND EXPERIMENT

MARK YEADON, NATIONAL UNIVERSITY OF SINGAPORESHIRLEY CHIANG, UNIVERSITY OF CALIFORNIA, DAVISROBIN F. C. FARROW, IBM ALMADEN RESEARCH CENTER, NEW YORKJAMES W. EVANS, IOWA STATE UNIVERSITYORLANDO AUCIELLO, ARGONNE NATIONAL LABORATORY, ILLINOIS

ISBN 10: 1558995277 / ISBN 13: 9781558995277

Published by Cambridge University Press, 2000

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Bibliographic Details

• Title: RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY Â " THEORY AND EXPERIMENT
• Publisher: Cambridge University Press
• Publication Date: 2000
• Language: English
• ISBN 10: 1558995277
• ISBN 13: 9781558995277
• Binding: Hardcover
• Condition: Brand New

About this title

Synopsis

Thin-film epitaxy is integral to many current and emerging technologies, and continued progress in solving critical issues is essential to the realization of new devices. This book, first published in 2000, focuses on progress in solving fundamental issues in the epitaxial growth of metals and oxides. Insights from both experiment, and modeling are combined to facilitate cross fertilization of ideas and understanding. Highlighted is the use of in situ characterization techniques for enhancing the efficiency of materials development. Thin-film research is often empirical in nature. Techniques for minimizing the time spent exploring the complex parameter space in order to optimize growth and processing conditions are of particular value. Among the techniques discussed are spectroscopic ellipsometry and ion scattering and recoil spectrometry, LEEM (low-energy electron microscopy), STM (scanning tunneling microscopy), TEM (transmission electron microscopy) and RHEED (reflection high-energy electron diffraction). Topics include: growth and dynamics of metal films; structure and oxidation of metal films and surfaces; in situ studies of oxide growth and epitaxial growth of oxides.

Book Description

Thin-film epitaxy is integral to many current and emerging technologies, and continued progress in solving critical issues is essential to the realization of new devices. This book, first published in 2000, focuses on progress in solving fundamental issues in the epitaxial growth of metals and oxides.