Remedies of Short Channel Effects in Conventional Mosfet

De, Swapnadip; Das, Debarati; Sarkar, Chandan Kumar

ISBN 10: 3659566268 / ISBN 13: 9783659566264

Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014

About this Item

Print on Demand pp. 76 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Seller Inventory # 131126691

Bibliographic Details

• Title: Remedies of Short Channel Effects in Conventional Mosfet
• Publisher: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG
• Publication Date: 2014
• Language: English
• ISBN 10: 3659566268
• ISBN 13: 9783659566264
• Binding: Soft cover
• Condition: New

About this title

Synopsis

MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE).The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the short-channel effects (SCEs). The model is derived using the pseudo-2D analysis by applying the Gauss's law to an elementary rectangular box in the channel depletion region, considering the surface potential variation with the channel depletion layer depth.

About the Author

Dr. Swapnadip De is working as Asst. Professor in ECE Department of Meghnad Saha Institute of Technology for the last 12 years. He obtained his PhD degree from Jadavpur University under the guidance of Prof. C.K.Sarkar. He is a member of IEEE EDS and Communications Society. He is also the Editor of Inderscience Publications.