Research on the Radiation Effects and Compact Model of SiGe HBT

Language: English

Published by Springer Nature Singapore Nov 2017, 2017

9811046115 / 9789811046117

Series: Book 361 of 797 - Springer Theses

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. 192 pp. Englisch.

Seller Inventory # 9789811046117

Title
Research on the Radiation Effects and Compact Model of SiGe HBT
Author
Yabin Sun
Publisher
Springer Nature Singapore Nov 2017
Publication year
2017
Condition
Neu
Binding
Buch
Language
English
ISBN 10
9811046115
ISBN 13
9789811046117
Item weight
459 grams
Dimensions
241x160x17 mm
Series
Book 361 of 797: Springer Theses

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

Shipping rates from Germany to U.S.A.

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First itemUS$ 26.71US$ 26.71
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BuchWeltWeit Ludwig Meier e.K.

Germany