Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device

Arnab Hazra

ISBN 10: 3848488329 / ISBN 13: 9783848488322

Published by LAP LAMBERT Academic Publishing, 2012

About this Item

Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device | Arnab Hazra | Taschenbuch | 96 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783848488322 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Seller Inventory # 106497232

Bibliographic Details

• Title: Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3848488329
• ISBN 13: 9783848488322
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 7D millimeters 220 millimeters width by 150 millimeters height by 7 millimeters depth
• Weight: 161 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.

About the Author

Arnab Hazra received his M-Tech degree in Electronics in the specialization of VLSI Design from Bengal Engineering and Science University, Shibpur,India in 2011. He is presently a PhD scholar in the Dept. of Electronics & Tele-Comm. Engg. in the same University. His research interests include Titanium dioxide and Graphene based chemical sensors.