Robust Sram Designs and Analysis
Language: English
Published by Springer, 2014
- Softcover
- New

Seller: Majestic Books, Hounslow, United KingdomMajestic Books
AbeBooks seller since January 19, 2007
Condition: New
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Print on Demand pp. 180.
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- Title
- Robust Sram Designs and Analysis
- Author
- Singh Jawar Pradhan Dhiraj Mohanty Saraju P.
- Publisher
- Springer
- Publication year
- 2014
- Condition
- New
- Binding
- Soft cover
- Language
- English
- ISBN 10
- 149390244X
- ISBN 13
- 9781493902446
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.
- Provides a complete and concise introduction to SRAM bitcell design and analysis;
- Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
- Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
- Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
"Synopsis" may belong to another edition of this title.
From the Back Cover
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.
- Provides a complete and concise introduction to SRAM bitcell design and analysis;
- Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
- Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
- Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
"About the title" may belong to another edition of this title.
Majestic Books
Hounslow, United Kingdom
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