Second Breakdown in Semiconductor Devices: A Bibliography (Classic Reprint)

Harry A. Schafft

ISBN 10: 1390537293 / ISBN 13: 9781390537291

Published by Forgotten Books, 2024

About this Item

Print on Demand. This book comprehensively delves into the phenomenon of second breakdown in transistors, presenting a detailed analysis of its causes, characteristics, and implications. The author delves into the theoretical underpinnings of this phenomenon, exploring various mechanisms such as thermal instability, charge carrier effects, and non-thermal effects. By examining different types of transistors and diodes, the book provides a thorough understanding of the factors influencing second breakdown and its manifestation in different semiconductor devices. Additionally, practical aspects are addressed, including design considerations, precautions for safe operation, and testing techniques for assessing second breakdown susceptibility. Through a combination of theoretical analysis, experimental observations, and practical insights, this book offers valuable knowledge for researchers, engineers, and anyone interested in understanding and mitigating second breakdown in semiconductor devices. This book is a reproduction of an important historical work, digitally reconstructed using state-of-the-art technology to preserve the original format. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in the book.

Seller Inventory # 9781390537291_0

Bibliographic Details

• Title: Second Breakdown in Semiconductor Devices: A Bibliography (Classic Reprint)
• Publisher: Forgotten Books
• Publication Date: 2024
• Language: English
• ISBN 10: 1390537293
• ISBN 13: 9781390537291
• Binding: Paperback
• Condition: New
• Book Type: print-on-demand item
• Seller catalogs:
  • Electronics

About this title

Synopsis

Comprehensive bibliography on second breakdown in semiconductor devices

A detailed, cataloged guide through the literature on second breakdown in transistors, diodes, and related structures. This edition collects references from 1958 through much of 1967, offering a curated view of how the topic has been studied and understood over time.

The book presents almost 200 references, with a broad mix of journal articles, conference papers, and some technical notes. It covers triggering mechanisms, thermal and non-thermal effects, and how second breakdown affects device reliability and failure modes. The material is organized to help researchers locate discussions by topic, device type, and key terms, with multiple indexes and keyword assignments to aid search and cross-reference.

• What you’ll find:
• A structured bibliography spanning foundational work and later studies on second breakdown
• An index to subject matter, reference tabulation, and key word assignments
• An index to authors and a footnotes section to provide context
• References that include transistor and diode behavior, plus related structures
• How it’s useful:
• Aimed at engineers and researchers designing, testing, or analyzing high-power semiconductor devices
• Helps identify relevant papers and trends across decades of work
• Provides accessible entry points into complex topics like trigger temperature, thermal effects, and current distribution
• Additional context:
• The bibliography notes convenience groupings and the inclusion of some company notes and theses
• It uses standardized abbreviations and organization rules to aid quick reference

Ideal for readers of engineering reliability and device physics who want a consolidated view of second breakdown literature to inform research or design decisions.