The Silicon Carbide MOS Capacitor | A Study of Defects, Generation Lifetimes, Leakage Currents, and Other Interesting Nonidealities in the Non-equilibrium SiC/SiO2 MOS Capacitor

Matthew Marinella

ISBN 10: 3639089057 / ISBN 13: 9783639089059

Published by VDM Verlag Dr. Müller, 2008

About this Item

The Silicon Carbide MOS Capacitor | A Study of Defects, Generation Lifetimes, Leakage Currents, and Other Interesting Nonidealities in the Non-equilibrium SiC/SiO2 MOS Capacitor | Matthew Marinella | Taschenbuch | Kartoniert / Broschiert | Englisch | 2008 | VDM Verlag Dr. Müller | EAN 9783639089059 | Verantwortliche Person für die EU: OmniScriptum GmbH & Co. KG, Bahnhofstr. 28, 66111 Saarbrücken, info[at]akademikerverlag[dot]de | Anbieter: preigu.

Seller Inventory # 101711277

Bibliographic Details

• Title: The Silicon Carbide MOS Capacitor | A Study of Defects, Generation Lifetimes, Leakage Currents, and Other Interesting Nonidealities in the Non-equilibrium SiC/SiO2 MOS Capacitor
• Publisher: VDM Verlag Dr. Müller
• Publication Date: 2008
• Language: English
• ISBN 10: 3639089057
• ISBN 13: 9783639089059
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 9W x 150H x 220D millimeters 9 millimeters width by 150 millimeters height by 220 millimeters depth
• Weight: 213 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Only a few years after the invention of thetransistor, William Shockley declared silicon carbide(SiC) an excellent material for high temperaturesemiconductor devices. In fact, he predicted that itwould be the most important electronic material to follow silicon. Furthermore, since SiC has the ability to grow thermal silicon dioxide, this would seem to be the ideal material for a high temperature metal oxide semiconductor field effect transistor (MOSFET). However, over a half century later, SiC technology has yet to attain widespread use in commercial electronic devices. This is due to number of significant hurdles; mainly the relatively high cost and difficulty of creating high quality SiC materials and its thermal SiO2 films. In this work, quality of the SiC/SiO2 system is studied using a simple structure, the metal oxide semiconductor (MOS)capacitor. Well developed methods, such as the pulsedMOS capacitor technique, are applied extensively tothis device. This work is particularly valuable forgraduate students, professors, electrical engineers,and scientists working to make the SiC MOSFET a reality.

About the Author

Matthew J. Marinella received his Ph.D. in Electrical Engineeringfrom Arizona State University in 2008. He studied semiconductordevice physics and characterization under Prof. Dieter K.Schroder. Dr. Marinella is currently a Device Engineer atMicrochip Technology in Tempe.